Shenzhen DeYi science and technology Co., Ltd is using patent of the GaAs growth method. GaAs single crystal grows by double heating temperature in furnace, the specific steps are as follows: 1. The crucible and growth furnace preheating, the vacuum degree is less than 6 * 10-3Pa, 50-150C / h rate of heating to 1300-1500C, holding for 24 to 48 hours, the cooling rate of 50-150C / h to room temperature after opening the stove cover. 2. The long process of crystal growth: GaAs seed oriented into boron nitride crucible, in according to the proportion of the mixed material in the crucible, alumina corundum plate covering the boron nitride crucible and furnace. The other component assembly in place, put down the covering. 3. Open the vacuum system for high vacuum growth furnace, vacuum is less than 6 * 10-3Pa, filled with high purity argon or nitrogen protection, air pressure is 0.01 ~ 0.05MP, Start growth control program, the heating rate of 10-100C / h, is heated to 1300-1500C temperature, holding for 3 to 12 hours, then reduce the temperature by 2 to 10 C / h rate until down to 900 to 1100 DEG C; the high temperature annealing: when GaAs crystal growth is over, the furnace temperature is reduced to 900 ~ 1100C, holding 1 ~ 30 hours. Cooling by 5, to 20C / h to room temperature,. Crystal growth process is finished.